대한전기학회:학술대회논문집 (Proceedings of the KIEE Conference)

대한전기학회 (The Korean Institute of Electrical Engineers)
권호 표지

스퍼터링법에 의한 Cu막 형성 기술

Fabrication of Copper Films by RF Magnetron Sputtering

  • 김현식 (경남대학교 무기재료공학과) ;
  • 송재성 (한국전기연구소 비정질재료연구팀) ;
  • 정순종 (한국전기연구소 비정질재료연구팀) ;
  • 오영우 (경남대학교 무기재료공학과)
  • 발행 : 1996.07.22
PDF 다운로드
⟨ 이전 논문 다음 논문 ⟩

초록

In present paper, Cu films $4{\mu}m$, thick were fabricated by dual deposition methods using RF magnetron sputtering on Si wafer. The dependence of the electrical resistivity, adherence, and reflection in Cu films [$Cu_{4-x}$(low resistivity) / $Cu_x$(high adherence) / Si- wafer] on the x thickness have been investigated. Cu films of $4{\mu}m$ thickness formed with dual deposition methods had the low electrical resistivity of about $2.6{\mu}{\Omega}{\cdot}cm$ and high adherence of about 700g/cm. In conclusion, it is possible for these films to be used for micro-devices.

키워드