rf FTMS법에 의해 제작된 산화물박막의 타겟-기판간거리 의존성

The Dependence of Target-Substrate Distance of Oxide Thin Films Fabricated by rf FTMS

A variety of processing techniques have been reported for preparing high quality functional thin films, and one of the most successful techniques has been known to be the rf FTMS(facing targets magnetron sputtering) method. The rf FTMS has preferable advantages to reduce the resputtering effect when depositing thin films and efficiently to oxidize the grown films by oxygen radicals. The resulting optimum conditions were found to be the rf power 50 W and the substrate position of 20 mm.