Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)
- 1996.07c
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- Pages.1612-1614
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- 1996
An Analytical Model for Breakdown Voltage of the Schottky diode with Double Epitaxial Layer
이중 에피층을 갖는 쇼트키 다이오드의 항복전압 모형
- Jung, Jin-Young (School of Electrical Engineering, Ajou University) ;
- Han, Seung-Youp (School of Electrical Engineering, Ajou University) ;
-
Chung, Sang-Koo
(School of Electrical Engineering, Ajou University)
;
- Choi, Yearn-Ik (School of Electrical Engineering, Ajou University)
- Published : 1996.07.22
Abstract
Analytical expression for the breakdown voltage of the Schottky diode with double epitaxial layer has been obtained. Analytical results agree reasonably with the numerical simulations using MEDICI. It is expected that our results can be used for the optimum design of power MOSFET as well as the Schottky diodes with double epitaxial layer.
Keywords