반도체 제조용 PCVD 반응기에서의 미립자 오염

Particle Contamination in PCVD Reactor for Semiconductor Processing

  • 김동주 (강원대학교 공과대학 화학공학과) ;
  • 김교선 (강원대학교 공과대학 화학공학과)
  • Kim, Dong-Joo (Department of Chemical Engineering, Kangwon National University.) ;
  • Kim, Kyo-Seon (Department of Chemical Engineering, Kangwon National University.)
  • 발행 : 1996.07.22

초록

We have studied the generation, growth and behavior of chemical species and particles in silane PCVD. We included the plasma chemistry of silane, particle nucleation by homogeneous formation, acrosol dynamics and transport phenomena of chemical species and particles. The concentration profile of chemical species and particles were shown as a function of reactor length. The effects of process variables such as reactor pressure, total gas flow rate and electrical field strength on the behavior of chemical species and particles were analyzed.

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