단일양자 우물구조로 된 InGaAs/InAlAs의 밴드간 공명 터널링 다이오드에 관한 연구

InGaAs/InAIAs resonant interband tunneling diodes(RITDs) with single quantum well structure

In resonant tunneling diodes with the quantum well structure showing the negative differential resistance (NDR), it is essential to increase both the peak-to-valley current ratio (PVCR) and the peak current density ($J_p$) for the accurate switching operation and the high output of the device. In this work, a resonant interband tunneling diode (RITD) with single quantum well structure, which is composed of $In_{0.53}Ga_{0.47}As/ln_{0.52}Al_{0.48}As$ heterojunction on the InP substrate, is suggested to improve the PVCR and $J_p$ through the narrowed tunnel barriers. As the result, the measured I-V curves showed the PVCR over 60.