Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)
- 1996.07c
- /
- Pages.1443-1445
- /
- 1996
Study on the Electrical Stability of poly-Si TFT through the Passivation Treatment with $NH_3$ or $N_2$ Precursors
$NH_3$ 및 $N_2$ 활성기 처리를 통한 Poly-SiliconTFT의 전기적 안정도에 관한 연구
- Jun, J.H. (School of Electrical Engineering, Seoul National University) ;
- Choi, H.S. (School of Electrical Engineering, Seoul National University) ;
- Park, C.M. (School of Electrical Engineering, Seoul National University) ;
- Choi, K.Y. (School of Electrical Engineering, Seoul National University) ;
- Han, M.K. (School of Electrical Engineering, Seoul National University)
- Published : 1996.07.22
Abstract
Hydrogen passivation enhances the electrical characteristics of poly-Si TFT(Thin Film Transistor). However, the weak Si-H bonds, generated during hydrogenation, degrade the stability of the device. So, we carried out the passivation treatment with
Keywords