Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)
- 1996.07c
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- Pages.1431-1433
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- 1996
A Breakdown Voltage Modeling of the GaAs Schottky Rectifiers
GaAs 쇼트키 정류기의 항복전압 모델링
- Chung, Yong-Sung (Department of Electronics Engineering, Kyungiu Junior College) ;
- Han, Seung-Youp (School of Electrical Engineering, Ajou University) ;
- Choi, Yearn-Ik (School of Electrical Engineering, Ajou University)
- Published : 1996.07.22
Abstract
Effective ionization coefficients for (100), (110) and (111) oriented gallium arsenide are extracted from the ionization coefficients far electrons and holes. Analytical formulas for the breakdown voltage of the GaAs Schottky rectifiers are derived by employing the ionization coefficients. The breakdown voltages obtained from our analytical model agree fairly well with the numerical results as well as the experimental ones reported in the range of
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