Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)
- 1996.07a
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- Pages.464-466
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- 1996
IGBT Modeling and Inverter System Simulation
IGBT의 모델링과 인버터 시스템 시뮬레이션
- Seo, Young-Soo (Myong-Ji Univ) ;
- Baek, Dong-Hyun (Kyung-Won College) ;
- Cho, Moon-Taek (Dae-Won College) ;
- Heo, Jong-Myung (Myong-Ji Univ) ;
- Lee, Sang-Hun (Myong-Ji Univ)
- Published : 1996.07.22
Abstract
IGBT devices have the best features of both power MOSFETs and power bipolar transistors, i.e., efficient voltage gate drive requirements and high current density capability. When designing circuit and systems that utilize IGSTs or other power semiconductor devices, circuit simulations are needed to examine how the devices affect the behavior of the circuit. The IGBT model in this paper is verified by comparing the results of the model with experimented results for various circuit operating conditions. The model performs well and describes experimented results accurately for the range of static and dynamic condition in which the device is intended to be operated.
Keywords