대한전기학회:학술대회논문집 (Proceedings of the KIEE Conference)

대한전기학회 (The Korean Institute of Electrical Engineers)
권호 표지

X선 회절법을 이용한 $p^+$ 실리콘 내 잔류응력의 깊이 방향 분포 추정

Determination of the Residual Stress Distribution along the Depth of Silicon by XRD $p^+$ Method

  • 정옥찬 (아주대학교 제어계측공학과) ;
  • 양의혁 (아주대학교 제어계측공학과) ;
  • 양상식 (아주대학교 제어계측공학과)
  • Jung, O.C. (Department of Control and Instrumentation Engineering AJOU University) ;
  • Yang, E.H. (Department of Control and Instrumentation Engineering AJOU University) ;
  • Yang, S.S. (Department of Control and Instrumentation Engineering AJOU University)
  • 발행 : 1995.11.18
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초록

X-Ray Diffraction method that gives direct information about the deformation of crystal lattice is used for the determination of profiles of the residual stress along the depth of heavily boron doped silicon. The residual stress distribution is obtained by XRD method as measuring the deformation of the front surface of the $p^+$ silicon layer fabricated through different etch time. It is determined that the compressive residual stress exists in the most region except the font surface.

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