대한전기학회:학술대회논문집 (Proceedings of the KIEE Conference)

대한전기학회 (The Korean Institute of Electrical Engineers)
권호 표지

이온 플레이팅에서 기판 BIAS 전위와 이온 에너지 분포와의 상관관계 연구

A Study on the Relationships between Substrate Bias Potential and Ion Energy Distributions

  • 성열문 (부산대학교 공과대학 전기공학과) ;
  • 신중홍 (동의대학교) ;
  • 손제봉 (부산전문대) ;
  • 조정수 (부산대학교 공과대학 전기공학과) ;
  • 박정후 (부산대학교 공과대학 전기공학과)
  • Sung, Y.M. (Department of Electrical Engineering, Pusan National University) ;
  • Shin, J.H. ;
  • Son, J.B. (Pusan technical college) ;
  • Cho, J.S. (Department of Electrical Engineering, Pusan National University) ;
  • Park, C.H. (Department of Electrical Engineering, Pusan National University)
  • 발행 : 1995.11.18
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초록

A Sputter ion Plating(SIP) system with a r.f. coil electrode and the Facing Target Sputter(FTS) source was designed for high-quality thin film formation. The rf discharge was combined with DC facing target sputtering in order to enhance ionization degree of a sputtered atoms. The energy of ions incident on the substrate depended on the health potential of DC biased substrate. The mean impact ion energy increased with negative bias voltage and rf power. The adhesive force of the TiN film formed was in the range of 30$\sim$50N, and markedly influenced by substrate bias voltage.

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