Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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A Study on the Preparation and Dielectric Properties of the PLZT Thin Films.

PLZT박막의 제조 및 유전 특성에 관한 연구

  • 박준열 (광운대학교 전자재료공학과) ;
  • 박인길 (광운대학교 전자재료공학과) ;
  • 이성갑 (서남대학교 전자공학과) ;
  • 이영희 (광운대학교 전자재료공학과)
  • Published : 1995.05.01
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Abstract

Thin film of the (Pb$\_$1-x/La.sub x/)(Zr$\_$0.25/Ti/Sub 0.48/) O$_3$(x=0~13[at%]) were prepared by Sol - Gel method. Multi-layer PLZT thin films were fabricated by spin-coating on Pt/Ti/SiO$_2$/Si substrate. The crystallinity and microstructure of the films were investigated with the sintering condition. At the sintering temperature of of 600[$^{\circ}C$], the perovskite phase was dominat. PLZT(11/52/48)thin films sintered at 600[$^{\circ}C$], 1[hr] had good dielectric constant (1236), dielectric loss (2.2[%]), remanent polarization (1.38[${\mu}$C/$\textrm{cm}^2$] and coercive field(16.86[ kV/cm]) respectively.

Keywords