Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 1995.05a
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- Pages.43-46
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- 1995
Hysteresis Characteristics of a-Si:H TFT
비정질 실리콘 박막 트랜지스터 히스테리시스 특성
Abstract
We fabricate a bottom gate a-Si:H TFT on N-Type <100> Si wafer. According to the variation of gate and drain voltage, the hysteresis characteristic curves were measured experimentally. Also, we showed that the model predict the hysteresis characteristic successfully. Drain current on the hysteresis characteristic currie showed an exponential variation. Hysteresis area of TFT increased with the drain voltage increase and decreases with the drain voltage decrease.
Keywords