Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Power Performance of X-Band Heterojunction Bipolar Transistors

X-Band용 HBT의 전력 특성에 관한 연구

  • 이제희 (인하대학교 전자재료공학과 고속전자소자연구실) ;
  • 김연태 (인하대학교 전자재료공학과 고속전자소자연구실) ;
  • 송재복 (인하대학교 전자재료공학과 고속전자소자연구실) ;
  • 원태영 (인하대학교 전자재료공학과 고속전자소자연구실)
  • Published : 1995.11.01
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Abstract

We report rf and power characteristics of AlGaAs/GaAs Heterojunction Bipolar Transistor (HBTs) for X-band power applications. HBTs have been fabricated with polyimide a an interlayer dielectric. By characterizing the DC and RF characteristics we obtained the maximum current gain of 45, BV$\_$CEO/ of 10 V, fT of 30 GHz and f$\_$max/ of 17 GHz for device with 6x14$\mu\textrm{m}$$^2$emitter size. To extract accurate equivalent parameters, the De-embedded method was applied for extraction of parasitic parameters and the calculation of circuit equations for intrinsic parameters. Based on the Load-pull method, power characteristics was simulated and measured to get the maximum output power of the device.

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