THE PROPERTIES OF NITROGEN IMPLANTED TUNGSTEN FILM AS Cu DIFFUSION BARRIER

  • Kwon, Chul-Soon (Micro pprocess Developpment, Samsung Electronics, 82-3, Dodang-Dong, Wonmi-Ku, Buchun, Kyunggi-Do, 421-130) ;
  • Kim, Dong-Joon (Semiconductor Materials Laboratory, Korea Institute of Science and Technology) ;
  • Kim, Yong-Tae (Semiconductor Materials Laboratory, Korea Institute of Science and Technology)
  • 발행 : 1995.06.01