Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
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A Study on the Variation of Surface Roughness of a-Si According to Recrystallization

비정질 실리콘의 재결정화에 따른 표면기복의 변화에 관한 연구

  • Park, Jae-Hong (Department of Electronic Engineering, Seoul City University) ;
  • Chung, Chong-Won (Department of Electronic Engineering, Seoul City University) ;
  • Kim, Chul-Ju (Department of Electronic Engineering, Seoul City University)
  • 박재홍 (서울시립대학교 전자공학과) ;
  • 정종원 (서울시립대학교 전자공학과) ;
  • 김철주 (서울시립대학교 전자공학과)
  • Published : 1995.07.20
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Abstract

In this study, we observed the surface morphology of amorphous silicon annealed at $700{\sim}1000^{\circ}C$ for recrystallization. In case of $700{\sim}800^{\circ}C$ annealing, deposited amorphous silicon have the saturated XRD intensity and decreased surface roughness after annealing for 3 hours. It is thought that surface roughness of amorphous silicon increases because of contributions caused by atomic rearrangement of surface, for instance, surface stress etc., in the course of recrystallinzation and decrease because of the relaxation of stress by annealing in reaching completion of recrystallization. In case of $1000^{\circ}C$ annealing, the effect of grain size on deposited silicon is more effective than that of surface roughness. These results show that small grain silicon has the stronger dependence on surface roughness than large grain one.

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