Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
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Optimal Die Design of the Power MOSFET considering the three dimensional Effect on the Breakdown Voltage

항복전압에 대한 3차원 효과를 고려한 전력 MOSFET의 최적 die설계

  • Kim, Jae-Hyung (Department of Electrical Engineering, Seoul Nat'l University) ;
  • Choi, Yearn-Ik (Department of Electronic Engineering, Ajou University) ;
  • Han, Min-Koo (Department of Electrical Engineering, Seoul Nat'l University)
  • Published : 1995.07.20
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Abstract

An analytic model for the optimum design of the power MOSFET considering the degradation of the breakdown voltage by the three dimensional effect is proposed. The proposed method gives the optimum design parameters such as the lateral radius of window curvature and the doping concentration of the epi-layer, which does not minimize the on-resistance but also maintains the required breakdown voltage. The analytical results are verified by the quasi 3D simulation tools, MEDICI, and it is found that the proposed method may be a good guideline for the design of power MOSFET.

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