Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)
- 1995.07c
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- Pages.1066-1068
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- 1995
Formation and Humidity-Sensitive Characteristics of Anodically Oxidized porous Silicon Films
다공질 실리콘 양극산화막의 형성과 감습특성
- Choi, Bok-Gil (Kongju University) ;
- Rhie, Dong-Hee (Suwon University) ;
- Ryoo, Jee-Ho (Korea University) ;
- Sung, Yung-Kwon (Korea University)
- Published : 1995.07.20
Abstract
The formation properties and oxidation mechanism of electrochemically oxidized porous silicon(OPS) films have been studied. To examine the humidity-sensitive properties of OPS films, surface-type and bulk-type humidity sensors were fabricated. The oxidized thickness of porous silicon layer(PSL) increases with the charge supplied during electrochemical oxidation and current density. The humidity sensor shows high sensitivity at high relative humidity in low temperature. The sensitivity and linearity can be improved by increasing a porosity of PSL.
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