Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)
- 1995.07c
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- Pages.1019-1021
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- 1995
An Analysis of Light-Induced Degradation of PECVD a-Si Films Using $SiF_4$
$SiF_4$ 를 이용하여 증착한 PECVD 박막의 빛에 의한 열화도 특성 분석
- Jang, K.H. (Department of Electrical Eng., Seoul National University) ;
- Choi, H.S. (Department of Electrical Eng., Seoul National University) ;
- Han, M.K. (Department of Electrical Eng., Seoul National University)
- Published : 1995.07.20
Abstract
Light induced degradation of hydrogenated amorphous silicon(a-Si:H) are related to the number of weak dangling bonds which are thought to be responsible for the Staebler-Wronski effects, and caused the many photoelectric problems in applications of thin film transistors and solar cell, etc. In this paper, we deposited fluorinated amorphous silicon films(a-Si:H;F) with
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