응력측정 구조를 이용한 $p^+$ 박막의 응력분포 추정

Estimation of the Stress Profile of $p^+$ Silicon Films Using Stress Measurement Structures

  • 양의혁 (아주대학교 제어계측공학과) ;
  • 양상식 (아주대학교 제어계측공학과) ;
  • 박응준 (아주대학교 기계공학과) ;
  • 유승현 (아주대학교 기계공학과)
  • Yang, E.H. (Dept. of Control and Instr. Eng. AJOU University) ;
  • Yang, S.S. (Dept. of Control and Instr. Eng. AJOU University) ;
  • Park, E.J. (Dept. of Mechanical Eng. AJOU University) ;
  • Yoo, S.H. (Dept. of Mechanical Eng. AJOU University)
  • 발행 : 1994.11.18

초록

In this paper, a new technique for quantitative estimation of the stress profile along the depth of $p^+$ silicon films is presented. The $p^+$ silicon cantilevers with various beam thickness and a rotating beam supported by two cantilevers are used for estimating the stress profile of the films. The average of the residual stress distribution is estimated to be 50MPa. Most of $p^+$ silicon films are subjected to the tensile stress, except the region near the frontside.

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