대한전기학회:학술대회논문집 (Proceedings of the KIEE Conference)

대한전기학회 (The Korean Institute of Electrical Engineers)
권호 표지

이온 에너지 분석에 의한 Sputter Ion Plating의 동작 특성 연구

A Study on the Characteristics of Sputter ion Plating by ion Energy Analysis

  • 성열문 (부산대학교 공과대학 전기공학과) ;
  • 이창영 (부산대학교 공과대학 전기공학과) ;
  • 조정수 (부산대학교 공과대학 전기공학과) ;
  • 박정후 (부산대학교 공과대학 전기공학과)
  • Sung, Y.M. (Department of Electrical Engineering, Pusan National University) ;
  • Lee, C.Y. (Department of Electrical Engineering, Pusan National University) ;
  • Cho, J.S. (Department of Electrical Engineering, Pusan National University) ;
  • Park, C.H. (Department of Electrical Engineering, Pusan National University)
  • 발행 : 1994.11.18
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초록

A Spotter ion Plating(SIP) system with a r. f. coil electrode and the Facing Target Sputter(FTS) source was designed for high-quality thin film formation. The rf discharge was combined with DC facing target sputtering in order to enhance ionization degree of a sputtered atoms. The discharge voltage-discharge characteristics curves of a FTS source could be characterized by the fern of $I{\propto}V^n$ with n in the range of $8{\sim}12$. The energy of ions incident on the substrate depended on the sheath potential of DC biased substrate. The mean impact ion energy increased with negative bias voltage and rf power. The adhesive force of the TiN film formed was in the range of $30{\sim}50N$, and markedly influenced by substrate bias voltage.

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