Subthreshold characteristics of Submicron pMOSFET by Computer Simulation

컴퓨터 시뮬레이션에 의한 서브마이크론 pMOSFET의 Subthreshold 특성 고찰

In the CMOS device, Counter doping is needed to adjust threshold voltage because of the difference between n-MOSFET and p-MOSFET well doping concentration when n+ polysilicon gate is used. Therefore buried channel is formed in the p-channel MOSFET degrading properties. So well doping concentration and doping condition should be considered in fabrication process and device design. Here we are to extract the initial process condition using simulation and fabricate p-MOSFET device and then compare the subthreshold characteristics of simulated and fabricated device.