한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 1994년도 추계학술대회 논문집
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- Pages.171-174
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- 1994
Remote PECVD (RPECVD) SiO$_2$ 막의 형성 및 특성
Foramtion and Characterization of SiO$_2$ films made by Remote Plasma Enhanced Chemical vapour Deposition
초록
The drive towards ultra-large-scale integrated circuits a continuous intermetal dielectric films for multi layer interconection. Optimum condition of remote plasma enhanced chemical vapour deposition(RPECVD) was achieved by orthogonal array method. Chracteristics of SiO
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