Sol-Gel법에 의한 Pb($Zr_{0.52}$$Ti_{0.48}$)$O_3$박막의 제조 및 강유전 특성

Preparing and Ferroelectric Properties of the Pb($Zr_{0.52}$$Ti_{0.48}$)$O_3$ Thin Film by Sol-Gel Method.

  • 이영준 (광운대학교 전자재료공학과) ;
  • 정장호 (광운대학교 전자재료공학과) ;
  • 이성갑 (서남대학교 전자공학과) ;
  • 이영희 (광운대학교 전자재료공학과)
  • 발행 : 1994.11.01

초록

Pb($Zr_{0.52}$$Ti_{0.48}$)$O_3$ ceramic thin films were fabricated from an alkoxide-based solution by Sol-Gel method. Pb($Zr_{0.52}$$Ti_{0.48}$)$O_3$ ceramic thin films were formed by spin coating method on Pt/$SiO_2$Si substrate at 4000ppm for 30 seconds. The coating process was repeated 6 times and then heat-treated at temperature between 500∼800[$^{\circ}C$] for 1 hour. The final thickness of the thin films were about 4800[A]. The ferroelectric perovskite phases precipitated under the heat-treated at 700[$^{\circ}C$] for 1 hour. Pb($Zr_{0.52}$$Ti_{0.48}$)$O_3$ thin films heat-treated at 700[$^{\circ}C$] for 1 hour showed good dielectric and ferroclectric properties.

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