Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Surface Migration in Al and Cu Films

알루미늄 및 구리 박막에서의 표면전자이주

  • 박종원 (한국전자통신연구소 반도체연구단) ;
  • 김윤태 (한국전자통신연구소 반도체연구단) ;
  • 이진호 (한국전자통신연구소 반도체연구단)
  • Published : 1994.11.01

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Abstract

Electromigration(EM) tests were carried out on Al and Cu films in HV systems to study surface migration. The Al films were made on oxidized silicon wafers by thermal evaporation, in-situ annealed at 300$^{\circ}C$, patterned, and EM tested at 260$^{\circ}C$ and 4.5MA/$\textrm{cm}^2$. SEM observation with back scattered electron mode on the EM tested Al films disclosed that thinning took place under the native Al oxide. In the case of Cu films, tested using in-situ TEM, thinning was also observed at the early stage of void formation even though the thinned areas were much less than those of the Al films.

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