Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 1994.11a
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- Pages.46-49
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- 1994
Investigation on the Memory Traps in the Scaled MONOS Nonvolatile Semoconductor Memory Devices
Scaled MONOS 비휘발성 반도체 기억소자의 기억트랩 조사
Abstract
In this paper we investigate the characteristics of switching and memory traps in sealed MONOS nonvolatile memory devices with different nitride thicknesses. We have demonttrated flatband voltage shift of 1V with 5V programming voltage. By fitting the experimental observations with theoretical calculations, trap density and capture cross section of memory trap at the nitride-blocking oxide interface are estimated to be 1.0
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