Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 1994.11a
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- Pages.33-36
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- 1994
scale-down of the Nonvolatile MONOS Memory Devices for the 5V-Programmable E$^2$ PROM
5V-Programmable E$^2$ PROM을 위한 비휘발성 MONOS 기억소자의 Scale-down
Abstract
The characteristics of the nonvolatile MONOS memory devices as the nitride thickness is scaled down while maintaining constant tunneling oxide thickness and blocking oxide thickness have been investigated in order to obtain the 5V-programmable E
Keywords