Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)
- 1994.07a
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- Pages.237-239
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- 1994
Switching Characteristics and PSPICE Modeling for MOS Controlled Thyristor
MOS 제어 다이리스터의 특성 해석 및 시뮬레이션을 위한 모델
- Lee, Young-Kook (Dept. of Electrical Engineering, Hanyang University) ;
- Hyun, Dong-Seok (Dept. of Electrical Engineering, Hanyang University)
- Published : 1994.07.21
Abstract
The MOS-controlled thyristor(MCT) is a new power semi-conductor device that combines four layers thyristor structure presenting regenerative action and MOS-gate providing controlled turn-on and turn-off. The MCT has very fast switching speed owing to voltage controlled MOS-gate, and very low on-state voltage drop resulting from regenerative action of four layers thyristor structure. In addition, because of a higher dv/dt rating and di/dt rating, gate drive circuit and snubber circuit can be simpler comparing to other power switching devices. So recently much interest and endeavor is being applied to develop the performance and ratings of the MCT. This paper describes the switching characteristic of the MCT for its practical applications and presents a model for PSPICE circuit simulation. The model for PSPICE circuit simulation is compared to the experimental result using MCTV75P60F1 made by Harris co..
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