Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
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A Study on the effect of hydrogen flow rate and $CH_4$ concentration in deposition of the diamond thin films by MWPECVD

MWPECVD법에 의한 Diamond합성에 있어서 수소류양과 메탄농도의 영향

  • Cho, J.K. (Dept. of Elec. Eng. kyung-nam univ.) ;
  • Park, S.T. (Dept. of Elec. Eng. kyung-nam univ.) ;
  • Park, S.H. (Dept. of Elec. Eng. kyung-nam univ.) ;
  • Geun, H.K. (Dept. of Elec. Eng. kyung-nam univ.) ;
  • Park, J.C. (Dept. of Electronics Yeung-Jin Junior College)
  • Published : 1994.07.21
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Abstract

Study on the effect of hydrogen flow rate and $CH_4$ concentration in deposition of the diamond thin films by MWPECVD diamond thin films were deposited on Si substrate from $CH_4-H_2-O_2$ system by MWPE CVD, and identified by SEM, XRD and Raman spectroscopy. The flow rate of hydrogen didn't affect the surface morphology and crystallity of diamond thin films, but did slightly affect growth rate. When the concentration of oxygen was fixed at 40%, the growth rate and crystallity of diamond thin films were gradually improved according to increasment of concentration of $CH_4$ but growth rate of the thin films showed peak at 7% and the crystallity showed peak at 6%.

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