대한전기학회:학술대회논문집 (Proceedings of the KIEE Conference)

대한전기학회 (The Korean Institute of Electrical Engineers)
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Sol-Gel 법으로 제조한 $Pb(Zr_{0.52}Ti_{0.48})O_3$ 박막의 유전 특성

Dielectric Properties of the $Pb(Zr_{0.52}Ti_{0.48})O_3$ Thin Film by Sol-Gel Method.

  • 정장호 (광운대학교 전자재료공학과) ;
  • 이영준 (광운대학교 전자재료공학과) ;
  • 이성갑 (서남대학교 전자공학과) ;
  • 이영희 (광운대학교 전자재료공학과)
  • 발행 : 1994.07.21
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초록

$Pb(Zr_{0.52}Ti_{0.48})O_3$ ceramic thin films were fabricated from an alkoxide-based solution by Sol-Gel method. $Pb(Zr_{0.52}Ti_{0.48})O_3$ ceramic thin films were formed by spin coating method on $Pt/SiO_2/Si$ substrate at 3000rpm for 30 seconds. The coating process was repeated 6 times and then heat-treated at temperature between 500 - $800[^{\circ}C]$ for 1 hour. The final thickness of the thin films were about 4800[A]. The 100% ferroelectric perovskite phases precipitated under the heat treated at $700[^{\circ}C]$ for 1 hour. $Pb(Zr_{0.52}Ti_{0.48})O_3$ thin films heat-treated at $700[^{\circ}C]$ for 1 hour showed good dielectric constant (812) property.

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