Mixed-Mode Simulation of the Power MOSFET with Current Limiting Capability

전류 제한 능력을 갖는 전력용 MOSFET의 Mixed-Mode 시뮬레이션

  • 윤종만 (서울대학교 전기공학과) ;
  • 최연익 (아주대학교 전자공학과) ;
  • 한민규 (서울대학교 전기공학과)
  • Published : 1994.07.21

Abstract

A monolithic current limiting power MOSFET, which may be easily fabricated by the conventional DMOS process, is proposed. The proposed current limiting MOSFET consists of main power cells, sensing cells, and NPN lateral bipolar transistor so that users can adjust the current limiting levels with only one external resistor. The behaviors of the proposed device are numerically simulated and analyzed by 2-D device simulator MEDICI and mixed-mode simulator CA-AAM(Circuit Analysis Advanced Application Module).

Keywords