대한전기학회:학술대회논문집 (Proceedings of the KIEE Conference)
- 대한전기학회 1994년도 하계학술대회 논문집 C
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- Pages.1442-1444
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- 1994
짧은채널 길이의 다결정 실리콘박막트랜지스터의 전기적 스트레스에 대한연구
Degradation of short channel poly-Si TFTs due to electrical stress
초록
The short channel poly-Si TFT is important in aspect of transistor characteristics, packing density and aperture ratio. In this paper, we have reported the degradation phenomena of short channel poly-Si TFT's which had significantly degraded device parameters, such as threshold voltage shift and a great asymmetric degradation, due to gate and drain electrical stress. The reduced effective channel length and expanded depletion region may be the main reason of these significant device parameters.
키워드