Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
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Degradation of short channel poly-Si TFTs due to electrical stress

짧은채널 길이의 다결정 실리콘박막트랜지스터의 전기적 스트레스에 대한연구

  • Choi, K.Y. (Dep't of Electrical Eng., Seoul National Univ.) ;
  • Kim, Y.S. (Dep't of Electrical Eng., Seoul National Univ.) ;
  • Han, M.K. (Dep't of Electrical Eng., Seoul National Univ.)
  • 최권영 (서울대학교 공과대학전기공학과) ;
  • 김용상 (서울대학교 공과대학전기공학과) ;
  • 한민구 (서울대학교 공과대학전기공학과)
  • Published : 1994.07.21
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Abstract

The short channel poly-Si TFT is important in aspect of transistor characteristics, packing density and aperture ratio. In this paper, we have reported the degradation phenomena of short channel poly-Si TFT's which had significantly degraded device parameters, such as threshold voltage shift and a great asymmetric degradation, due to gate and drain electrical stress. The reduced effective channel length and expanded depletion region may be the main reason of these significant device parameters.

Keywords