대한전기학회:학술대회논문집 (Proceedings of the KIEE Conference)

대한전기학회 (The Korean Institute of Electrical Engineers)
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박막구조를 가진 폴리실리콘 압저항형 습도센서의 연구

Study on Piezoresistive Humidity Sensor using Polycrystalline Silicon with Membrane

  • 박성일 (경북대학교 전기공학과) ;
  • 박새광 (경북대학교 전기공학과)
  • Park, Sung-Il (Kyungpook National University, Department of Electrical Engineering) ;
  • Park, Se-Kwang (Kyungpook National University, Department of Electrical Engineering)
  • 발행 : 1994.07.21
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초록

This paper deals with piezoresistive humidity sensor using polycrystalline silicon (Poly-Si ) with membrane in sensors of semiconductor. Poly-Si piezoresistors which have no temperature dependancy are deposited on silicon wafer, membrane is formed with micromachining technology, then polyimide is formed as a hygroscopic layer. Whereas the principle of conventional humidify sensors are based on the change in electrical properties of the material, the humidity induced volume change of a polyimide layer leads to a deformation of a silicon membrane in this case. This deformation is transformed into an output voltage by Poly-Si piezoresistive. Wheatstone bridge. Fabricated piezoresistive humidity sensors showed good linearity, response time, and long term stability.

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