9/65/35 PLZT 박막의 유전적, 전기적 특성

Dielectrical and Electrical Characteristics of 9/65/35 PLZT Thin Films

  • 발행 : 1994.07.21

초록

9/65/35 PLZT thin films were prepared by sol-gel processing and annealed by direct insertion, 9/65/35 PLZT thin films were poly-crystallized after direct insertion at $750^{\circ}C$ for 3omin. The grain size of film was 50 nm, coercive field was 28.2 kV/cm and remnant polarization was $3.68 {\mu}C/cm^2$.

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