Al Doping and Post Annealing Effects of Pyrosol Deposited ZnO Thin Films

Pyrosol 법에 의한 ZnO 투명전도막의 Al Doping 및 열처리 효과

ZnO transparent conducting oxide thin films have been prepared by Pyrosol deposition method. The effect of the Al doping with varying Al/Zn mole ratio and the post-deposition heat treatment on the electrical resistivity and optical transmittance of the prepared films have been investigated. From the experimental results, the ZnO:Al thin films with resistivity as low as $3{\times}10^{-3}{\Omega}cm$ and transmittance as high as 80% can be obtained by Al doping. Also We have found the annealing of the as-deposited ZnO film in vacuum leads to a substantial reduction in resistivity without affecting the optical transmittance and crystallographic orientation. However, the annealing effect of ZnO:Al thin films is smaller than ZnO films with respect to reduction in resistivity.