대한전기학회:학술대회논문집 (Proceedings of the KIEE Conference)
- 대한전기학회 1994년도 하계학술대회 논문집 C
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- Pages.1250-1253
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- 1994
다양한 습식식각법을 이용한 (100), (110), (111) Si tip의 제작
Fabrication of (100), (110), (111) Si Tips using Various Wet Etching Method
- 박흥우 (서울시립대학교 전자공학과) ;
-
주병권
(한국과학기술연구원 정보전자 연구부) ;
- 고창기 (서울시립대학교 전자공학과) ;
- 홍순관 (서울시립대학교 전자공학과) ;
- 오명환 (한국과학기술연구원 정보전자 연구부) ;
- 김철주 (서울시립대학교 전자공학과)
- Park, Heung-Woo (Seoul City Univ. Dept. Electronic Engineering) ;
-
Ju, Byeong-Kwon
(KIST Div. Electronics and Information Technology) ;
- Ko, Chang-Gi (Seoul City Univ. Dept. Electronic Engineering) ;
- Hong, Soon-Kwan (Seoul City Univ. Dept. Electronic Engineering) ;
- Oh, Myoung-Hwan (KIST Div. Electronics and Information Technology) ;
- Kim, Chui-Ju (Seoul City Univ. Dept. Electronic Engineering)
- 발행 : 1994.07.21
초록
(100), (110) and (111) Si wafers are etched by isotropic etching method, anisotropic etching method using KOH etchant and EPW etchant and combined two-step etching method to compare the results. Isotopic etching method is effective in fabrication of wedge-shaped tips, especially (110) Si. Anisotropic etching method of (100) Si using EPW etchant can fabricate sharp cone-shaped tips and isotropic etching after anisotropic etching of (100) Si can fabricate wedge-shaped tips.
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