대한전기학회:학술대회논문집 (Proceedings of the KIEE Conference)

대한전기학회 (The Korean Institute of Electrical Engineers)
권호 표지

반사형 InGaAs MQW SEED 소자의 제작 및 특성

Fabrication and Characteristics of Reflection Type InGaAs MQW SEED

  • 김성우 (포항공과대학교 전자전기공학과/산업과학기술연구소) ;
  • 박성수 (포항공과대학교 전자전기공학과/산업과학기술연구소) ;
  • 박종철 (포항공과대학교 전자전기공학과/산업과학기술연구소) ;
  • 김택승 (포항공과대학교 전자전기공학과/산업과학기술연구소) ;
  • 권오대 (포항공과대학교 전자전기공학과/산업과학기술연구소) ;
  • 강봉구 (포항공과대학교 전자전기공학과/산업과학기술연구소)
  • Kim, Sung-Woo (Dept. of Electronic and Electrical Eng., POSTECH / RIST) ;
  • Park, Sung-Soo (Dept. of Electronic and Electrical Eng., POSTECH / RIST) ;
  • Park, Jong-Cheol (Dept. of Electronic and Electrical Eng., POSTECH / RIST) ;
  • Kim, Taek-Seung (Dept. of Electronic and Electrical Eng., POSTECH / RIST) ;
  • Kwon, O-Dae (Dept. of Electronic and Electrical Eng., POSTECH / RIST) ;
  • Kang, Bong-Koo (Dept. of Electronic and Electrical Eng., POSTECH / RIST)
  • 발행 : 1994.07.21
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초록

A reflection type SEED from LP-MOCVD grown InGaAs/GaAs ESQW structures, with 5% In fraction, has been fabricated and its basic characteristics were investigated. Its intrinsic region consists of 50 pairs of alternating $100{\AA}$ $In_{0.05}Ga_{0.95}As$ barrier and $100{\AA}$ GaAs layers. And a multilayer reflector stack of $Al_{0.12}Ga_{0.88}As(641{\AA})-/AlAs(774{\AA})$ was vertically integrated below the p-i-n structures. The device processing includes the mesa etching, insulator deposition, indium metallization, and thermal alloy for Ohmic contact. Photocurrent spectrum measurement showed the exciton absorption peak at 905nm and availability as a optical switching device. This device showed a contrast ratio of 2:1 by the reflectance spectrum measurement.

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