한국전자현미경학회:학술대회논문집
- 한국현미경학회 1993년도 제24회 학술대회 연제 초록
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- Pages.30-30
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- 1993
Structural Characterization of Epitaxial GaAs on Si(100) Grown by Ionized Source Beam Epitaxy
- Yoo, M.C. (New Materials Lab., Samsung Advanced Institute of Technology) ;
- Yun, S.J. (Microelectronics Laboratory and Materials Research, University of Illinois at Urbana-Champaign) ;
- Kim, K. (Microelectronics Laboratory and Materials Research, University of Illinois at Urbana-Champaign) ;
- Rigsbee, J.M. (Microelectronics Laboratory and Materials Research, University of Illinois at Urbana-Champaign)
- 발행 : 1993.06.01