Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)
- 1993.11a
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- Pages.240-242
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- 1993
A new IGBT structure for suppression of latch up with selective N+ buffer layer
Selective N+ 버퍼층을 갖는 latch up 억제를 위한 새로운 IGBT 구조
- Kim, Doo-Young (Seoul National University) ;
- Lee, Byeong-Hoon (Seoul National University) ;
- Choi, Yearn-Ik (Ajou University) ;
- Han, Min-Koo (Seoul National University)
- Published : 1993.11.26
Abstract
A novel structure, which can suppress latch-up phenomena, is proposed and verified by the PISCESIIB simulation. It is shown that this structure employing the selective N+ buffer layer increases latch-up current density due to suppression of the current flowing through the p-body. The width of the N+ buffer layer is optimized considering the trade-off between the latch-up current density and the forward voltage drop. The selective buffer layer results in an improved trade-off relationship compared with the uniform buffer layer.
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