대한전기학회:학술대회논문집 (Proceedings of the KIEE Conference)
- 대한전기학회 1993년도 정기총회 및 추계학술대회 논문집 학회본부
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- Pages.148-150
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- 1993
과도 해석 시뮬레이션을 위한 IGBT소자의 논리적인 모델링
Analytical Modeling of the IGBT Device for Transient Analysis Simulation
- 서영수 (명지대학교 공과대학 전기공학과) ;
- 장성철 (명지대학교 공과대학 전기공학과) ;
-
김영춘
(명지대학교 공과대학 전기공학과)
;
- 조문택 (명지대학교 공과대학 전기공학과) ;
- 서수호 (명지대학교 공과대학 전기공학과)
- Seo, Yong-Soo (Department of Electrical Engineering, Myong-Ji University) ;
- Jang, Seong-Chil (Department of Electrical Engineering, Myong-Ji University) ;
-
Kim, Yong-Chun
(Department of Electrical Engineering, Myong-Ji University)
;
- Cho, Moon-Taek (Department of Electrical Engineering, Myong-Ji University) ;
- Seo, Soo-Ho (Department of Electrical Engineering, Myong-Ji University)
- 발행 : 1993.11.26
초록
The IGBT(Insulated Gate Bipolar Transistor) is a power semiconductor device that has gained acceptance among power electronic circuit design engineers for motor drive and Power converter applications. The device-circuit interaction of power insulated gate bipolar transistor for a series-inductor load, both with and without a snubber are, simulated. An analytical model for the transient operation of the IGBT is used in conjunction with the load circuit state equations for the simulations.
키워드