Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)
- 1993.11a
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- Pages.148-150
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- 1993
Analytical Modeling of the IGBT Device for Transient Analysis Simulation
과도 해석 시뮬레이션을 위한 IGBT소자의 논리적인 모델링
- Seo, Yong-Soo (Department of Electrical Engineering, Myong-Ji University) ;
- Jang, Seong-Chil (Department of Electrical Engineering, Myong-Ji University) ;
- Kim, Yong-Chun (Department of Electrical Engineering, Myong-Ji University) ;
- Cho, Moon-Taek (Department of Electrical Engineering, Myong-Ji University) ;
- Seo, Soo-Ho (Department of Electrical Engineering, Myong-Ji University)
- 서영수 (명지대학교 공과대학 전기공학과) ;
- 장성철 (명지대학교 공과대학 전기공학과) ;
- 김영춘 (명지대학교 공과대학 전기공학과) ;
- 조문택 (명지대학교 공과대학 전기공학과) ;
- 서수호 (명지대학교 공과대학 전기공학과)
- Published : 1993.11.26
Abstract
The IGBT(Insulated Gate Bipolar Transistor) is a power semiconductor device that has gained acceptance among power electronic circuit design engineers for motor drive and Power converter applications. The device-circuit interaction of power insulated gate bipolar transistor for a series-inductor load, both with and without a snubber are, simulated. An analytical model for the transient operation of the IGBT is used in conjunction with the load circuit state equations for the simulations.
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