한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 1993년도 추계학술대회 논문집
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- Pages.97-102
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- 1993
PECVD에 의해 형성된 oxynitride막의 전기적 특성
Electrical properities of oxynitride film by PECVD
초록
According as the high integrity of the semi conductor devices is definited required, the concern on the multi-layered wiring, and three-dimensional devices is growing these days. Therefore, plasma-enhanced chemical vapored deposition(PECVD) enables low-teperature process and is widely used, but it causes the instability of the devices due to a lot of impurities within the film. The PECVD oxynitride was formed by changing the gas ratio of (N
키워드