Proceedings of the Korean Vacuum Society Conference (한국진공학회:학술대회논문집)
- 1993.02a
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- Pages.109-109
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- 1993
Effects of Cl$_2$ or SF$_6$ pplasma treatments on removal of residue on reactive ion etched Si surface
- ppark, Hyung-Ho (Semiconductor Technology Division, ETRI) ;
- Kwon, Kwang-Ho (Semiconductor Technology Division, ETRI) ;
- Koak, Byong-Hwa (Semiconductor Technology Division, ETRI) ;
- Kwon, Oh-Joon (Semiconductor Technology Division, ETRI)
- Published : 1993.02.01
Abstract
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