대한전기학회:학술대회논문집 (Proceedings of the KIEE Conference)

대한전기학회 (The Korean Institute of Electrical Engineers)
권호 표지

저온에서 제작된 다결정 실리콘 박막 트랜지스터의 수소화 효과에 대한 분석

Analysis of hydrogenation effects on Low temperature Poly-Si Thin Film Transistor

  • Choi, K.Y. (Dept. of Electrical Eng., Seoul National Univ.) ;
  • Kim, Y.S. (Dept. of Electrical Eng., Seoul National Univ.) ;
  • Lee, S.K. (Dept. of Electrical Eng., Seoul National Univ.) ;
  • Lee, M.C. (Dept. of Electrical Eng., Seoul National Univ.) ;
  • Han, M.K. (Dept. of Electrical Eng., Seoul National Univ.)
  • 발행 : 1993.07.18
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초록

The hydrogenation effects on characteristics of polycrystalline silicon thin film transistors(poly-Si TFT's) of which the channel length varies from $2.5{\mu}m\;to\;20{\mu}m$ and poly-Si layer thickness is 50, 100, and 150 nm was investigated. After 1 hr hydrogenation annealing by PECVD, the threshold voltage shift decreased dependent on the channel length, but channel width may not alter the threshold voltage shift. In addition to channel length, the active poly-Si layer thickness may be an important parameter on hydrogenation effects, while gate poly-Si thickness may do not influence on the characteristics of TFT's. Considering our experimental results, we propose that channel length and active poly-Si layer thickness may be a key parameters of hydrogenation of poly-Si TFT's.

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