Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 1992.11a
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- Pages.3-6
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- 1992
Fabrication and New Model of Saturated I-V Characteristics of Hydrogenerated Amorphous Silicon Thin Film Transistor
비정질 실리콘 박막 트랜지터 포화전압 대 전류특성의 새로운 모델
- Lee, Woo-Sun (Dept. of Electrical Eng. Cho-Sun University) ;
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Kang, Yong-Chul
(Dept. of Electrical Eng. Cho-Sun University) ;
- Yang, Tae-Hwan (Dept. of Electrical Eng. Cho-Sun University) ;
- Chung, Hae-In (Dept. of Electrical Eng. Cho-Sun University)
- Published : 1992.11.07
Abstract
A new analytical expression for the saturated I-V characteristics of hydrogenerated amorphous silicon thin film transistors(a-si:H TFT) is presented and experimentally verified. The results show that the experimental transfer and output characteristics at several temperatures are easily modeled. The model is based on three functions obtained from the experimental data of
Keywords