Proceedings of the Materials Research Society of Korea Conference (한국재료학회:학술대회논문집)

Materials Research Society of Korea (한국재료학회)
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The Effect of $NH_3$ Annealing for Gate Oxide

게이트 산화막에 대한 암모니아 어닐링의 효과

  • 김영조 (서울시립대학교 전자공학과) ;
  • 김철주 (서울시립대학교 전자공학과)
  • Published : 1992.05.01
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Abstract

The NH$_3$oxidation, which forms thermal oxide layer on silicon substrate with pure $O_2$gas added with small amounts of NH$_3$gas, has good interface sates due to activated gettering effect during oxidation. The superiority of interfae state in NH$_3$ oxidation method is not affected by preprocess but by gettering during oxidation. The dramatec reduction fo interface state is conformed with observing OSF when NH$_3$ oxide is annealed in NH$_3$ atmosphere.

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