한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 1992년도 춘계학술대회 논문집
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- Pages.34-38
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- 1992
PECVD 산화막의 온도 의존성과 RTP 어닐링 효과
The dependence of temperature and the effects of RTP annealing of PECVD SiO$_2$ films
초록
Low temperature device processing has become of great interest within the last few years. In such low temperature processes, SiO
키워드