Proceedings of the Korean Vacuum Society Conference (한국진공학회:학술대회논문집)
- 1992.02a
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- Pages.93-94
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- 1992
Behavior of Oxygen pprecippitates during SIMOX SOI Fabrication and Their Influences to the Electrical ppropperty
SIMOX SOI 제조시 산소석출물의 거동과 전기적 특성에 미치는 영향
Abstract
2X1018 ions/cmz at 180 keV and post-implantation annealing at 12500C for 6 hours in nitrogen ambient. The oxygen redistribution process during post-implantation annealing was examined by AES and TEM. The electrical property of the structure was investigated by SRP method. We could find oxygen precipitates in SOl layer after high temperature annealing. The influence of the precipitates to the electrical property of the SOl layer was discussed. And the Iimiting factor to the decrease of the precipi tates during post-implantation anneal ing was discussed also.
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