Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
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A Study on the Law Temperature Plasma Etching using Electron Cyclotron Resonance

전자 공명을 이용한 저온 플라즈마 식각에 관한 연구

  • Lee, Seok-Hyun (Dep. of Electrical Engineering, Seoul National University) ;
  • Kim, Jae-Sung (Dep. of Electrical Engineering, Seoul National University) ;
  • Whang, Ki-Woong (Dep. of Electrical Engineering, Seoul National University) ;
  • Kim, Won-Kyu (Dep. of Electrical Engineering, Seoul National University)
  • 이석현 (서울대 대학원 전기공학과) ;
  • 김재성 (서울대 대학원 전기공학과) ;
  • 황기웅 (서울대 대학원 전기공학과) ;
  • 김원규 (서울대 대학원 전기공학과)
  • Published : 1992.07.23
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Abstract

A cryogenic electron cyclotron resonance plasma etching system has been built to study wafer-temperature in the silicon etching characteristics. The wafer temperature was controlled from -150 to +30 $^{\circ}C$ during etching using the liquid nitrogen cooled helium gas. Although silicon was etched isotropically in $SF_6$ plasma at room temperatures, we found that it is possible to suppress the etch undercut in Si by reducing a substrate temperature without side wall passivation. In addition, the selectivity of silicon to photoresist was improved considerably at a low wafer temperature. Etch rates, anisotropy and selectivity to photo resist are measured as a function of the wafer temperature in the region of -125 $\sim$ 25$^{\circ}C$ and rf bias power of 20W $\sim$ 80W.

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