A Study on the Modeling of Microwave GaAs MESFETs

Microwave GaAs MESFET의 특성해석 Modeling에 관한 연구

This paper describes an improved analytic model for a gallium-arsenide MESFET computer simmulation and deals with application to microwave performance. The current-voltage characteristics, the dependence of the capacitances, transconductances and drainconductances on bias conditions and the dependences of s-parameters on various frequencies are calculated. The model is base on a physical picture revealed through two-dimensional numerical analysis, and takes into account transition region and diffusion process under gate but it require a very small computer time. Simulation results agree well with the experimental data found earlier by other author The proposed model can be used for a computer-aided design of GaAs MESFET devices and for a study of application to microwave performance.